Teteruk D.V.

SUPPRESSION OF CVD DIAMOND GROWTH ON SIDE FACE OF SUBSTRATE IN PROCESS OF GAS-PHASE PRECIPITATION

CVD diamond grows on the all surfaces of the substrate, including the side faces. However, the diamond layer on side faces may be undesirable. We proposed and developed the method to suppress the CVD diamond growth on the side faces using silicon wells. The optimal geometric dimensions of the wells were determined. The studies of the structural quality of the CVD diamond films were carried out.

Key words: diamond, CVD diamond, diamond growth suppression

REFERENCES
1. Blank V.D., Bormashov V.S., Tarelkin S.A., Buga S.G., Kuznetsov M.S., Teteruk D.V., Kornilov N.V., Terentiev S.A., Volkov A.P. Power high-voltage and fast response Schottky barrier diamond diodes. Diamond and Related Materials. 2015. 57. P. 32–36. DOI: 10.1016/j.diamond.2015. 01.005.
2. Gippius A.A., Khmelnitsky R.A., Dravin V.A., Khomich A.V. Diamond–graphite transformation induced by light ions implanta-tion. Diamond and Related Materials. 2003. N 3-7 (12). P. 538–541. DOI: 10.1016/S0925-9635(02)00291-1.

2016, Т. 59, № 8, Стр. 64-68

CRYSTALLOGRAPHIC ORIENTATION INFLUENCE ON SECONDARY ELECTRON EMISSION COEFFICIENT OF A SINGLE CRYSTAL OF SYNTHETIC DIAMOND

Dependence of secondary electron emission coefficient on the chosen crystallograph-ic orientation for a synthetic single crystal diamond of type IIb, grown up by method of a temperature gradient, was investigated. The type IIb of single crystal diamond was chosen because of wide applicability in different areas of microelectronics and the semiconductor properties. Quantitative measurements of secondary electron emission coefficients with ener-gy of primary beam about 7 keV and above for various crystallographic orientations was carried out: the highest coefficient of secondary electronic emission are recorded for the di-rection (100), cubic sector, and also in intergrowth area that is confirmed by a picture of dis-tribution of the luminescence intensity for various sectors of a single crystal received by means of true secondary electrons detector of scanning electron microscope.

2016, Т. 59, № 8, Стр. 21-26
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