CRYSTALLOGRAPHIC ORIENTATION INFLUENCE ON SECONDARY ELECTRON EMISSION COEFFICIENT OF A SINGLE CRYSTAL OF SYNTHETIC DIAMOND

Dependence of secondary electron emission coefficient on the chosen crystallograph-ic orientation for a synthetic single crystal diamond of type IIb, grown up by method of a temperature gradient, was investigated. The type IIb of single crystal diamond was chosen because of wide applicability in different areas of microelectronics and the semiconductor properties. Quantitative measurements of secondary electron emission coefficients with ener-gy of primary beam about 7 keV and above for various crystallographic orientations was carried out: the highest coefficient of secondary electronic emission are recorded for the di-rection (100), cubic sector, and also in intergrowth area that is confirmed by a picture of dis-tribution of the luminescence intensity for various sectors of a single crystal received by means of true secondary electrons detector of scanning electron microscope. The results for (100) area are outstanding: 8.18 at primary beam energy of 7 keV, 10.13 at 10 keV, 49.78 at 30 keV. The results for intergrowth area are similar: 10.10 at primary beam energy of 7 keV, 13.56 at 10 keV, 64.41 at 30 keV. The crystallographic directions (111) have shown second-ary electron emission coefficient 4-6 times lower in comparison with (100) and intergrowth area: 2.54 on the average at primary beam energy of 7 keV, 2.75 at 10 keV, 10.03 at 30 keV. The non-standard behavior of secondary electron emission coefficient at the high ener-gy primary beam for all orientations of single crystal diamond is shown: increase in second-ary electron emission coefficient with increase in energy of primary beam. At the moment the reason of such behavior is not clear up to the end and since this fact causes a great interest of researchers, considerably expands applicability of the existing devices and detectors due to replacement of a functional element on diamond one, and also opens big opportunities for formation of new field of microelectronics, this facts demand further in-depth study by means of various methods of the structural and surface analysis.

Key words: secondary electron emission, electronic affinity, surface states, diamond

REFERENCES
1. Nemanich R.J., Batman B.K., van der Weider J. Diamond negative electron affinity surfaces, structures and devices. Applications of diamond films and related materials. Third international conference. Gaithersburg, Maryland. 1995. P. 17-24.
2. Cui J. B., Ristein J., Ley L. Electron Affinity of the Bare and Hydrogen Covered Single Crystal Diamond (111) Surface. Physical Review Letters. 1998. V. 81. N 2. P. 429 - 432. DOI: 10.1103/PhysRevLett.81.429.
3. Mearini G.T., Krainsky I.L., Dayton J.A., Wang Y., Zorman C.A., Angus J.C., Hoffman R.W., Anderson D.F. Stable secondary electron emission from chemical vapor deposited diamond films coated with alkali-halides. Appl. Phys. Lett. 1995. V. 66. N 2. P. 242-244. DOI: 10.1063/1.113559.
4. Sadovoy V., Bormashov V., Terentiev S. Research of Influence of Different Preparation Parameters on Secondary Electron Emission of a Single Crystal Diamond with the Purpose of Microchannel Devices Development with High Quantum Efficiency. Sensors and Transducers. 2014. V. 183. N 12. P. 110-115. http://www.sensorsportal.com/HTML/ DIGEST/P_2550.htm.
5. Shih A., Yater J., Pehrsson P., Butler J., Hor C., Abrams R. Secondary electron emission from diamond surfaces. J. Appl. Phys. 1997. V. 82. P. 1860 - 1867. DOI: 10.1063/1.365990.
6. Dvorkin V.V., Dzbanovsky N.N., Suetin N.V., Poltoratsky E.A., Rychkov G.S., Il’ichev E.A., Gavrilov S.A. Secondary electron emission from CVD diamond films. Diamond and Related Materials. 2003. V. 12. P. 2208 – 2218. DOI: 10.1016/S0925-9635(03)00320-0.
7. Shvid'ko Y., Stoupin S., Blank V., Terentyev S. Near-100% Bragg reflectivity of X-rays. Nature Photonics. 2011. V. 5. P. 539 – 542. DOI:10.1038/nphoton.2011.197.
8. Blank V.D., Kuznetsov M.S., Nosukhin S.A., Terentiev S.A., Denisov V.N. The influence of crystallization temperature and boron concentration in growth environment on its distribution in growth sectors of type IIb diamond. Diamond and Related Materials. 2007. V. 16. P. 800 – 804. DOI: 10.1016/j.diamond.2006.12.010.

2016, Т. 59, № 8, Стр. 21-26

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