SUPPRESSION OF CVD DIAMOND GROWTH ON SIDE FACE OF SUBSTRATE IN PROCESS OF GAS-PHASE PRECIPITATION

CVD diamond grows on the all surfaces of the substrate, including the side faces. However, the diamond layer on side faces may be undesirable. We proposed and developed the method to suppress the CVD diamond growth on the side faces using silicon wells. The optimal geometric dimensions of the wells were determined. The studies of the structural quality of the CVD diamond films were carried out.

Key words: diamond, CVD diamond, diamond growth suppression

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2016, Т. 59, № 8, Стр. 64-68

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