CVD diamond grows on the all surfaces of the substrate, including the side faces. However, the diamond layer on side faces may be undesirable. We proposed and developed the method to suppress the CVD diamond growth on the side faces using silicon wells. The optimal geometric dimensions of the wells were determined. The studies of the structural quality of the CVD diamond films were carried out.

Key words: diamond, CVD diamond, diamond growth suppression

1. Blank V.D., Bormashov V.S., Tarelkin S.A., Buga S.G., Kuznetsov M.S., Teteruk D.V., Kornilov N.V., Terentiev S.A., Volkov A.P. Power high-voltage and fast response Schottky barrier diamond diodes. Diamond and Related Materials. 2015. 57. P. 32–36. DOI: 10.1016/j.diamond.2015. 01.005.
2. Gippius A.A., Khmelnitsky R.A., Dravin V.A., Khomich A.V. Diamond–graphite transformation induced by light ions implanta-tion. Diamond and Related Materials. 2003. N 3-7 (12). P. 538–541. DOI: 10.1016/S0925-9635(02)00291-1.
3. Khomich A.V., Khmelnitskiy R.A., Dravin V.A., Gippius A.A., Zavedeev E.V., Vlasov I.I. Radiation damage in diamonds sub-jected to helium implantation. Physics of the Solid State. 2007. N 9 (49). P. 1661–1665. DOI: 10.1134/ S1063783407090107.
4. Marchywka M., Pehrsson P.E., Vestyck D.J. Jr., Moses D. Low energy ion implantation and electrochemical separation of dia-mond films. Appl. Phys. Lett. 1993. N 25 (63). P. 3521. DOI: 10.1063/1.110089.
5. Tarelkin S.A., Bormashov V.S., Buga S.G., Volkov A.P., Teteruk D.V., Kornilov N.V., Kuznetsov M.S., Terentiev S.A., Golovanov A.V., Blank V.D. Power diamond vertical Schottky barrier diode with 10 A forward current. Physica status solidi (a). 2015. N 11 (212). P. 2621. DOI: 10.1002/pssa.201532213.
6. Yamada H., Chayahara A., Mokuno Y., Umezawa H., Shikata S., Fujimori N. Fabrication of 1 Inch Mosaic Crystal Diamond Wafers. Appl. Phys. Exp. 2010. N 5 (3). P. 051301. DOI: 10.1143/APEX.3.051301.
7. Yamada H., Chayahara A., Mokuno Y., Tsubouchi N., Shikata S.-I. Uniform growth and repeatable fabrication of inch-sized wafers of a single-crystal diamond. Diamond and Related Materials. 2013. 33. P. 27–31. DOI: 10.1016/ j.diamond.2012.12.012.
8. Feng T., Schwartz B.D. Characteristics and origin of the 1.681 eV luminescence center in chemical-vapor-deposited diamond films. AIP J. Appl. Phys. 1993. 73. P. 1415- 1425. DOI: 10.1063/1.353239.

2016, Т. 59, № 8, Стр. 64-68


You will get the pdf-copy of your article by e-mail